NFPA 1910-2024实施日期：2024-01-01

英文名：Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, And 2N7496U5, Jantxvr, F, G, And H, And Jansr, F, G, And H

NFPA 1900-2024实施日期：2024-01-01

英文名：Transistor, Field Effect, Silicon, N-Channel, Radiation Hardened, Encapsulated (Surface Mount And Carrier Board Packages), Types 2N7472, 2N7473, And 2N7474, Jantxvr And Jansr

NFPA 1660-2024实施日期：2024-01-01

英文名：Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Encapsulated (Surface Mount And Carrier Board Packages), Types 2N7468 And 2N7469 Jantxvr, F, G And H And Jansr, F, G And H

NFPA 1091-2024实施日期：2024-01-01

英文名：Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon, Types 2N7424, 2N7425, And 2N7426, Jantxvr, Jantxvf, Jansr, And Jansf

NFPA 1030-2024实施日期：2024-01-01

英文名：Semiconductor Device, Transistor, High Voltage, Field Effect, N-Channel, Silicon, Type 2N7387 And 2N7387U1, Jan, Jantx, Jantxv, And Jans

NFPA 1026-2024实施日期：2024-01-01

英文名：Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, And 2N7408, Jansd And Jansr

NFPA 791-2024实施日期：2024-01-01

英文名：Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 And 2N7404, Jansd And Jansr

NFPA 790-2024实施日期：2024-01-01

英文名：Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Type 2N7370, Jan, Jantx, Jantxv, And Jans

NFPA 610-2024实施日期：2024-01-01

英文名：Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N7368 Jan, Jantx, Jantxv,And Jans

NFPA 460-2024实施日期：2024-01-01

英文名：Semiconductor Device, Transistor, Pnp, Silicon, High-Power, Type 2N7369, Jan, Jantx, Jantxv, And Jans

NFPA 440-2024实施日期：2024-01-01

英文名：Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And H